In recent years, LaAlO 3 /SrTiO 3 interface is found to be an ideal host for two-dimensional electron gas (2DEG). Such heterostructures have attracted extensive interests in recent years due to their ...
Gallium nitride (GaN) power devices are redefining the limits of switching converters by combining wide bandgap physics with lateral HEMT structures optimized for fast, low-loss operation. This ...
Researchers have now grown a 2DEG system on gallium arsenide, a semiconductor that's efficient in absorbing and emitting light. This development is promising for new electronic devices that interact ...
Owing to its broadband nature, unique spectral fingerprint, safety, and penetration capabilities, terahertz (THz) waveband (0.1 to 10 THz) holds promise for diverse applications, including biomedical ...
As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...
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